<注：本视频仅用于学术交流，版权归报告人所有>

►【纳米物理与器件重点实验室系列学术报告(139)】

题目：Heterogeneous photonic integration with silicon and silicon nitride

时间：2021年11月4日（星期四）14:00

报告人：向超 博士  美国加州大学圣塔芭芭拉分校电子与计算机工程系

地点：线上腾讯会议

报告摘要：

Silicon photonics is evolving rapidly into advanced photonic integrated circuits. Heterogeneous photonic integration, which originates from the motivation to provide laser sources for silicon, now shows its performance advantages in various types of devices. On the other hand, silicon nitride is emerging in applications where low loss is the key factor. In this talk I’ll discuss the recent progress of heterogeneous integration for silicon and silicon nitride photonics, which could enable the next-generation high-performance photonic integrated circuits for applications including interconnects, sensing, metrology and so on.

报告人简介：

Chao Xiang is currently a postdoctoral scholar at University of California, Santa Barbara. He received the B.E. degree in Optoelectronic Information Engineering from Huazhong University of Science and Technology, Wuhan, China, the M.Phil. degree in Information Engineering from Chinese University of Hong Kong, Hong Kong and the Ph.D. degree in the Department of Electrical and Computer Engineering from University of California, Santa Barbara, CA, USA. His research interests include silicon photonics, semiconductor lasers, and heterogeneous photonic integrated circuits. He has published 10+ research articles in prestigious journals including Science/Optica etc. He has led the developments of first generation of heterogeneous integrated lasers on silicon nitride, laser soliton microcombs and several other record-performance heterogeneous silicon photonic devices.