<注：本视频仅用于学术交流，版权归报告人所有>

►【纳米物理与器件重点实验室系列学术报告(129)】

报告题目: Epitaxial Integration of antimonide optoelectronic devices on Silicon

报告时间：2019年07月12日（星期五）14:00

报告地点：中科院物理所M楼253会议室

报告人：Eric Tournié

           IES, Université de Montpellier, CNRS, France

Abstract:

The antimonide III-V semiconductors rely on the GaSb, InAs, AlSb, InSb binary compounds and their quaternary or pentanary alloys (AlGaAsSb, GaInAsSb, AlGaInAsSb,.. ). This technology exhibits several distinctive properties as compared to other semiconductors: type-I to type-III band alignments, giant band offsets, low effective masses of electrons and holes, direct bandgaps between 0.15 and 1.7 eV.

They are particularly well suited to the development of mid-IR optoelectronic devices for sensing applications. The evolution toward smart, integrated, sensors requires integrating GaSb-based optoelectronic devices on Si-based platforms. We have demonstrated a variety of epitaxially integrated optoelectronic devices such as laser diodes, photodetectors and the first ever QCL grown on Si. In this presentation we review the recent results obtained on the integration of antimonidebased optoelectronic devices epitaxially grown on Si substrates, including on on-axis substrates. We will show that this technology is very attractive for future III-V on Si integration, and we will discuss future integration schemes

Brief bio:

Eric Tournié is a Professor of Electrical Engineering at Université de Montpellier (F) where he leads the mid-IR research group of Institute d’Electronique, UMR CNRS 5214. His current work focuses on the epitaxial integration of GaSb-based devices on Si platforms. From 1990 to 1993 he was with the Max-Planck-Institute in Stuttgart (D), working on InAs-based highly-strained heterostructures on InP and GaAs substrates. In 1993 he joined CRHEA/CNRS, Valbonne (F), towork on ZnSe-based heterostructures for blue-green lasers. In 1999 he initiated a program on GaInNAs heterostructures for telecom applications. He has been appointed as a Professor by U. Montpellier in 2002.  E. Tournié is a member of the Program Committee and/or Int. Advisory Committee of the Int. Conf. on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Int. Molecular-Beam Epitaxy conference (MBE), Int. Symposium on Compounds Semiconductors (ISCS) conference series. He chaired the ISCS 2014, MIOMD 2014and IC-MBE 2016 conferences. E. Tournié has published more than 250 papers in refereed journals and gave more than 60 invited conferences.